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| MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-H HIGH POWER SWITCHING USE INSULATED TYPE QM75E2Y/E3Y-H * * * * * IC Collector current .......................... 75A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION DC chopper, DC motor controllers, Inverters OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 (7) 20 10.5 13 10.5 (E2Y) (7) 20 27 6.5 E1 D2 D1 A1 C1 80 34 E1 B1 12 B1 M5 Tab#110, t=0.5 6.5 E1 (E3Y) D2 D1 C1 E1 K1 31 LABEL (8) 22.5 E1 B1 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-H HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) (Transistor part including D1, Tj=25C) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 75 75 350 4.5 750 Unit V V V V A A W A A ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) IDC IFSM I2t Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage DC current Surge (non-repetitive) forward current I2t for fusing (Diode part (D2), Tj=25C) Conditions Ratings 600 720 480 DC circuit, resistive, inductive load Peak value of one cycle of 60Hz (half wave) Value for one cycle of surge current 75 1500 9.45 x 103 Unit V V V A A A2s ABSOLUTE MAXIMUM RATINGS Symbol Tj Tstg Viso Parameter Junction temperature Storage temperature Isolation voltage (Common) Conditions Ratings -40~150 -40~125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.96~2.94 20~30 210 Unit C C V N*m kg*cm N*m kg*cm g -- Mounting torque Mounting screw M6 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Transistor part including D1, Tj=25C) Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=75A, IB=1A -IC=75A (diode forward voltage) IC=75A, VCE=2V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=300V, IC=75A, IB1=-IB2=1.5A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 200 2.0 2.5 1.85 -- 2.5 12 3.0 0.35 1.3 0.15 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-H HIGH POWER SWITCHING USE INSULATED TYPE ELECTRICAL CHARACTERISTICS Symbol IRRM VFM trr Qrr Rth (j-c) Rth (c-f) Parameter Repetitive peak reverse current Forward voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance (Diode part (D2), Tj=25C) Test conditions VR=VRRM, Tj=150C IF=75A IF=75A, di/dt=-150A/s, VR=300V, Tj=150C Junction to case Conductive grease applied (case to fin) Limits Min. -- -- -- -- -- -- Typ. -- -- -- -- -- -- Max. 1.0 1.5 0.9 30 0.6 0.15 Unit mA V s C C/ W C/ W PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 200 COLLECTOR CURRENT IC (A) 2 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 0 VCE=5.0V DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) IB=1.5A 120 IB=2.0A IB=1.0A DC CURRENT GAIN hFE 160 VCE=2.0V 80 IB=0.5A 40 Tj=25C 0 0 1 2 3 4 5 VCE (V) Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR-EMITTER VOLTAGE COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.0 1.4 1.8 2.2 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 1 BASE CURRENT IB (A) VBE(sat) SATURATION VOLTAGE VCE(sat) IB=1A Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3 VCE=2.0V Tj=25C 2.6 VBE (V) 3.0 BASE-EMITTER VOLTAGE COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-H HIGH POWER SWITCHING USE INSULATED TYPE COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 5 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) ton, ts, tf (s) 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ts 10 1 7 5 4 3 2 VCC=300V IB1=-IB2=1.5A Tj=25C Tj=125C tf 4 IC=100A 3 2 IC=30A SWITCHING TIME 1 Tj=25C Tj=125C IC=75A IC=50A 0 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 BASE CURRENT IB (A) 10 0 7 5 4 3 2 10 0 ton 2 3 4 5 7 10 1 2 3 4 5 7 10 2 IC (A) COLLECTOR CURRENT SWITCHING TIME VS. BASE CURRENT (TYPICAL) 2 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 COLLECTOR CURRENT IC (A) ts, tf (s) REVERSE BIAS SAFE OPERATING AREA 160 IB2=-2A 120 -5A ts SWITCHING TIME tf VCC=300V IB1=1.5A IC=75A Tj=25C Tj=125C 2 3 4 5 7 10 0 2 3 4 5 7 10 1 80 40 Tj=125C 0 0 200 400 600 800 VCE (V) BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 D DERATING FACTOR OF F. B. S. O. A. 100 90 DERATING FACTOR (%) SECOND BREAKDOWN AREA COLLECTOR CURRENT IC (A) tw=50s 10 C 100s 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 TC (C) COLLECTOR DISSIPATION 5 1m 00 s s m s 10 1 7 5 3 2 NON-REPETITIVE 10 0 TC=25C 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-H HIGH POWER SWITCHING USE INSULATED TYPE TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 710 1 0.5 0.4 Zth (j-c) (C/W) 0.3 0.2 0.1 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) PERFORMANCE CURVES (Diode part (D1)) FORWARD CHARACTERISTICS (TYPICAL) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 0 0.4 0.8 1.2 MAXIMUM SURGE CURRENT IFSM (A) SURGE FORWARD CURRENT 800 700 600 500 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 FORWARD CURRENT IF (A) Tj=25C Tj=125C 1.6 2.0 FORWARD VOLTAGE VF (A) CONDUCTION TIME (CYCLES AT 60Hz) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC 10 0 2 3 4 5 710 1 2 3 4 5 2.0 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 10 2 7 VCC=300V 5 IB1=-IB2=1.5A Tj=25C 4 Tj=125C 3 2 10 1 7 5 4 3 2 10 0 10 0 2 3 4 5 7 10 1 10 1 Irr 1.6 Irr (A), Qrr (c) Zth (j-c) (C/W) Qrr 10 0 trr (s) 1.2 0.8 trr 10 -1 2 3 4 5 7 10 2 0.4 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -12 3 4 5 7 10 0 FORWARD CURRENT IF (A) TIME (s) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES (Diode part (D2)) MAXIMUM FORWARD CHARACTERISTIC TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC 10 0 2 3 4 5 710 1 2 3 4 5 7 1.0 FORWARD CURRENT IF (A) 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 Tj=25C Zth (j-c) (C/W) 0.8 0.6 0.4 0.2 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) 0.6 1.0 1.4 1.8 2.2 VF (V) FORWARD VOLTAGE MAXIMUM SURGE CURRENT IFSM (A) REVERSE RECOVERY CHARACTERISTICS (VS. IF) (TYPICAL) 2000 1800 1600 1400 1200 1000 800 600 400 200 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 Irr (A), Qrr (C) SURGE FORWARD CURRENT 10 2 7 VR=300V 5 di/dt=-150A/s Tj=25C 3 Tj=150C 2 10 1 7 5 3 2 10 0 7 5 3 2 10 2 Irr Qrr 10 1 trr (s) 10 0 trr 10 -1 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A) CONDUCTION TIME (CYCLES AT 60Hz) REVERSE RECOVERY CHARACTERISTICS (VS. di/dt) (TYPICAL) Irr (A), Qrr (C) 10 2 7 VR=300V 5 IF=75A 3 Tj=25C 2 Tj=150C 10 1 7 5 3 2 Irr Qrr 10 2 10 1 trr (s) 10 0 10 0 7 5 trr 3 2 10 -1 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 di/dt (A/s) Feb.1999 |
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